413 INDEX Page numbers in italics refer to illustrations or tables. Advanced Memory Systems (AMS), 192, 203, 245; RCA and, 164; and semiconductor memory, 196 Advanced Micro Devices (AMD), 173, 292, 296 Amelio, Gil, 375n.106, 376n.109 American Microsystems, 180, 196, 267; and RCA, 163 Anderson, A. E.: on M. M. Atalla, 327n.43; on Bell Labs and MOS transistor, 29–31; on silicon diffused technology, 324nn.16, 18, 19 AT&T, 9. See also Bell Labs; Bell System Atalla, M. M. (John): background of, 23; later career of, 146, 327n.43; 328n.44; 375n.106; and MOS transistor, 23–24, 30, 31–33, 42, 325nn.26, 27, 332n.73 atomic airplane, 64 Autonetics, 129, 180; and silicon on sapphire , 164, 365n.54 Balk, Pieter, 80, 85, 100, 142, 311 Bardeen, John, 15–17, 112, 321n.3 Bell, C. Gordon, 373n.84 Bell Labs, 287, 339n.9; bipolar transistor and, 14, 17–23, 26–28, 324n.18, 325n.24; compared with other firms, 35, 36, 49, 73– 74, 329n.57, 337n.3; diffusion of technology and people to other organizations from, 45, 46, 68, 98–99, 141, 158, 293; initial transistor work at, 14–17; loss of leadership of, in transistor technology, 28–29, 55–56, 336n.101, 337n.102; and MOS transistor, 23–25, 28–33, 328nn.44, 45; organization of research at, 18–19, 339n.14. See also AT&T; Bell System Bell System, problems of transistor usage in, 19–20, 323n.13, 324n.15. See also AT&T; Bell System Bennett, Edward, 254–56, 387n.14 bipolar transistor, 2, 162, 176–77, 319n.2, 322n.5; Bell Labs and, 12–14, 17–23, 26– 28, 324n.18, 325n.24; Fairchild and, 45– 48, 49–50, 117, 120, 122, 137–38, 206– 7, 208; Intel and, 176–77, 205, 208, 369n.25, 375n.105; IBM and, 4–5, 77, 304, 343n.59; MOS transistor and, 6–8, 44, 53, 115–16, 137–38, 218–22, 228, 229, 242– 43, 246–48, 301–2, 353n.23, 358n.70, 379n.25 Bloch, Erich, 160–61, 231 Booher, Bob, 129–30 Boysel, Lee: background of, 123; and computer on a chip, 264–65, 280; at Fairchild, 126–36, 137–38, 173–74, 179; and FourPhase Systems, 256–62; at IBM, 124–26; MOS computer design manifesto of, 127– 29, 314; Gordon Moore on, 355n.47, 358n.72; Frank Wanlass and, 122–25, 129–30, 151, 155 Brattain, Walter, 16–17, 321n.3 Brody, Peter, 148 414 Index Bush, Vannevar, and linear model of R&D, 61, 62, 284–85 Busicom, 267–68, 270 cache memories, 103, 177, 220 calculators, electronic, 76, 267, 277–78, 392n.71; Victor, 151–53, 153 Caltech, 49, 271, 293 Cartesian, 194, 257 Cary, Frank, 217, 218, 247 Castrucci, Paul, 228, 381n.48 Ceruzzi, Paul, 279 Chandler Jr., Alfred, 198, 210, 348n.42, 366n.3, 381n.46 charge coupled devices, 207, 376n.109 Cheroff, George, 80, 81, 83–84, 87, 99, 156, 247, 311, 344n.3 Chou, Sunlin, 395n.8 Christensen, Clayton, 5 CMOS, 3, 51, 201, 303; development effort at IBM, 248–49, 386n.108; RCA work in, 162–64, 165, 289 Cogar, 192, 231–39, 292, 316; compared with Intel, 235, 236, 237, 239, 289; IBM and, 233–36, 237, 238, 250, 294, 383n.61, 383n.68; and Viatron, 254 Cogar, George, 232, 233, 235, 382n.57 Cole, Bob, 135, 155, 194, 257, 388n.20 Complementary MOS. See CMOS complementary symmetry, 162 computer aided design: approach to integrated circuits, 262–63, 289–90, 358n.68, 369n.24; at Fairchild, 121–22, 136–37, 175–76, 357n.67; at IBM, 85, 86–87, 88–91 conferences: Intel and, 204–5; moral economy of, 359n.5; role of, in spreading semiconductor technology, 25–26, 140–46, 177, 325n.28, 326n.30. See also IEEE; International Electron Device meeting; International Solid State Circuits Conference; Silicon Interface Specialists Conference; Solid State Device Research Conference Critchlow, Dale, 80, 214, 311, 344n.1, 363n.36, 377n.11; 397n.24; and creation of MOS design manual, 216–17, 378n.17 cryogenic computer, 65, 81, 88 crystal rectifier, 16, 322n.4 CV technique, 110, 116 Davidow, William, 274 Davis, Ed, 217–22, 379nn.22, 25, 30, 380nn.35, 38 Deal, Bruce, 53, 108, 140, 142; and MOS stability, 98, 109, 110, 112, 113, 114, 352n.14 Dennard, Robert, 80, 311, 344n.1; invention of one device cell of, 214–15, 356n.54, 377n.11; and MOS scaling, 283–84, 332n.79 diffusion process for fabricating transistors, 19 digital...